型号 SPI21N10
厂商 Infineon Technologies
描述 MOSFET N-CH 100V 21A TO-262
SPI21N10 PDF
代理商 SPI21N10
产品变化通告 Product Discontinuation 22/Feb/2008
产品目录绘图 Mosfets TO-262
标准包装 50
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 21A
开态Rds(最大)@ Id, Vgs @ 25° C 80 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大) 4V @ 44µA
闸电荷(Qg) @ Vgs 38.4nC @ 10V
输入电容 (Ciss) @ Vds 865pF @ 25V
功率 - 最大 90W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 PG-TO262-3
包装 管件
其它名称 SP000013843
SPI21N10-ND
SPI21N10IN
SPI21N10X
SPI21N10XK
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